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APTM100UM45D-ALN
Single switch with Series diode MOSFET Power Module
SK S D
VDSS = 1000V RDSon = 45m max @ Tj = 25C ID = 215A @ Tc = 25C
Application * Zero Current Switching resonant mode
G
DK
Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration * AlN substrate for improved thermal performance Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Low profile
DK
S
D
SK G
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
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APTM100UM45D-ALN - Rev 0 July, 2004
Max ratings 1000 215 160 860 30 45 5000 30 50 3200
Unit V A V m W A
APTM100UM45D-ALN
All ratings @ Tj = 25C unless otherwise specified
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
Electrical Characteristics
Test Conditions VGS = 0V, ID = 1.5mA
VGS = 0V,VDS= 1000V VGS = 0V,VDS= 800V
Tj = 25C Tj = 125C
Min 1000
Typ
Max 600 3 45 5 600
VGS = 10V, ID = 107.5A VGS = VDS, ID = 30mA VGS = 30 V, VDS = 0V
3
Unit V A mA m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 215A Inductive switching @ 125C VGS = 15V VBus = 670V ID = 215A R G = 0.5 Inductive switching @ 25C VGS = 15V, VBus = 670V ID = 215A, R G = 0.5 Inductive switching @ 125C VGS = 15V, VBus = 670V ID = 215A, R G = 0.5
Min
Typ 42.7 7.6 1.3 1602 204 1038 18 14 140 55 7.2 4.3 12 5.8
Max
Unit nF
nC
ns
mJ mJ
Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol VRRM IRM IF(A V) VF Characteristic
Maximum Repetitive Reverse Voltage
Test Conditions
VR=1000V
Min 1000 Tj = 125C
T j = 90C
Typ
Max 3
Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage
V
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
IF = 360A VR = 667V di/dt = 800A/s IF = 360A VR = 667V di/dt = 800A/s
280 350 4.56 21.6
ns C
APT website - http://www.advancedpower.com
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APTM100UM45D-ALN - Rev 0 July, 2004
50% duty cycle IF = 360A IF = 720A IF = 360A
360 1.9 2.2 1.7
Unit V mA A
2.5
APTM100UM45D-ALN
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink For teminals M6 M5 Transistor Series diode 2500 -40 -40 -40 3 2 Min Typ Max 0.025 0.12 150 125 100 5 3.5 280 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Package outline
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APTM100UM45D-ALN - Rev 0 July, 2004
APTM100UM45D-ALN
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.03 Thermal Impedance (C/W) 0.025 0.02 0.015 0.01 0.005 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 540 480 I D, Drain Current (A) 420 360 300 240 180 120 60 0 0 5 10 15 20 25
5.5V 5V 6V VGS =15, 10V
Transfert Characteristics 720 ID, Drain Current (A)
VDS > I D(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
7V 6.5V
600 480 360 240 120 0
TJ=25C TJ =125C 0 1 2 3 4 5 TJ=-55C 6 7 8
30
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS =10V @ 107.5A
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 240 210 180 150 120 90 60 30 0 25 50 75 100 125 150
APTM100UM45D-ALN - Rev 0 July, 2004
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
VGS=10V
VGS=20V
120
240
360
480
ID, Drain Current (A)
TC, Case Temperature (C)
APT website - http://www.advancedpower.com
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APTM100UM45D-ALN
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage Ciss Coss VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 14 12 10 8 6 4 2 0 0 350 700 1050 1400 1750 2100
APTM100UM45D-ALN - Rev 0 July, 2004
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS =10V ID=107.5A
1000
limited by R DSon 100s 1ms
100
10 Single pulse TJ=150C 1 1
10ms
10 100 1000 VDS , Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage ID=215A TJ=25C
VDS=200V VDS=500V VDS=800V
10000
Crss 1000
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
Gate Charge (nC)
APT website - http://www.advancedpower.com
5-6
APTM100UM45D-ALN
Delay Times vs Current 150 td(on) and td(off) (ns) 120 90 60 30 0 80 120 160 200 240 280 320 360 400 I D, Drain Current (A) Switching Energy vs Current
V DS=670V RG =0.5 T J=125C L=100H
Rise and Fall times vs Current 100
VDS=670V RG=0.5 T J=125C L=100H
t d(off)
tf
80
tr and tf (ns)
60 40 tr 20 0 80 120 160 200 240 280 320 360 400 ID, Drain Current (A) Switching Energy vs Gate Resistance
td(on)
24 Switching Energy (mJ) Switching Energy (mJ) 20 16 12 8 4 0 80 120 160 200 240 280 320 360 400
ID, Drain Current (A) Operating Frequency vs Drain Current
VDS=670V RG=0.5 TJ=125C L=100H
Eon
36 30 24 18 12 6 0 0
VDS=670V ID=215A T J=125C L=100H
Eoff
Eoff
Eon
1
2
3
4
5
6
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage
250 Frequency (kHz) 200 150 100 50 0 20 50 80 110 140 170 ID, Drain Current (A) 200
VDS=670V D=50% RG=0.5 T J=125C T C=75C ZCS
IDR, Reverse Drain Current (A)
300
1000 TJ=150C 100 TJ=25C
10
Hard switching
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
APTM100UM45D-ALN - Rev 0 July, 2004
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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